About Us


Founded in January 2020 and located in Lingang of the Shanghai Free Trade Zone, Advanced Micro Semiconductors Co., Ltd. (“AMSFAB”), features a gross floor area of 60,000 m² and clean room area of 8,000 m² in phase one campus. As an advanced compound semiconductor foundry, AMSFAB has first-class processes and distinctive solutions, and focuses on providing diversified foundry and supporting services to its customers in the fields of optoelectronics ("OE") and power electronics ("Power"), which supports products widely used in various applications including communication, automotive, new energy, consumer electronics, industries, etc.

AMSFAB offers one-stop solutions for customers ranging from epitaxial growth to wafer processing. Besides AMSFAB also provides value-added services include design support, MPW wafer services, mask services, wafer testing, failure analysis etc. AMSFAB can help to shorten TTM (Time to Market) of products so as to bring more value to customers.

Corporate Culture

Our Team

Team members include top-notch professionals from worldwide semiconductor industry

AMSFAB's continuous success has been supported by the management and R&D teams consisting of top-notch professionals from worldwide semiconductor industries. The team has extensive experience in R&D and mass production in compound semiconductor area including radio frequency, power devices and optoelectronic processes.

23% of our team holds Master's or PhD degrees



January 23

 AMSFAB incorporated in Shanghai.

September 29

Project begans with the first pile driving.


April 30

Structure sealing of clean room in mass production line was completed.

September 20

The first semiconductor manufacturing equipment was successfully moved in.

December 31

AMSFAB successfully produces the first wafer.


January 18

AMSFAB received official approval to establish the Shanghai Compound Semiconductor Technology Innovation Center.

September 20

AMSFAB Phase I, compound semiconductor wafer fabrication facility, puts into production.


September 20

Integrated Passive Device (IPD) process platform was launched.

October 26

The 0.25μm E/0.5μm D Mode GaAs pHEMT process platform was launched.